Sign In | Join Free | My wpc-board.com |
|
Part Number : HN3C51F-GR(TE85L,F
Manufacturer : Toshiba Electronic Devices and Storage Corporation
Description : HN3C51F-GR(TE85L,F datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : HN3C51F-GR(TE85L,F More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.00
Remark : Manufacturer: Toshiba Electronic Devices and Storage Corporation. Rozee is one of the Distributors. Wide range of applications.
Mount : Surface Mount
Polarity : NPN
Case/Package : SOT-26
Power Dissipation : 300 mW
Transition Frequency : 100 MHz
Max Breakdown Voltage : 120 V
Max Power Dissipation : 300 mW
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 5 V
Collector Emitter Voltage (VCEO) : 300 mV
Collector Emitter Saturation Voltage : 300 mV
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty : 207 In Stock
Applications : Datacom module Power delivery Enterprise projectors
hFE Min : 200
Frequency : 100 MHz
Number of Pins : 6
Number of Elements : 2
Element Configuration : Dual
Max Collector Current : 100 mA
Gain Bandwidth Product : 100 MHz
Min Operating Temperature : -55 °C
Collector Base Voltage (VCBO) : 120 V
Collector Emitter Breakdown Voltage : 120 V
![]() |
HN3C51F-GR(TE85L,F Images |